Process for oxidizing semiconducting compounds, especially gallium arsenide

摘要

In order to provide a semiconductive substrate such as gallium arsenide with an oxide layer, the substrate is positively biased in a plasma reactor in which an oxidizing gas is ionized by radiofrequency excitation while the substrate is heated to an elevated temperature increasing its conductivity. The substrate may be placed for this purpose on a graphite pedestal which is inductively heated from the same radiofrequency source.