| 摘要 |
PURPOSE:To obtain an FET which is independent on an incompletely insulating substrate by insularly forming an active region on the semi-insulating substrate, covering the part except the active region with an insulating film, and forming ohmic electrodes on a Schottky electrode and the active region over the both regions. CONSTITUTION:An active region 31 is insularly formed on a semi-insulating substrate 32, and the periphery is covered with an insulating film 33. Ohmic electrodes 34, 35 are formed on the region 31, a Schottky electrode 36 which immediately runs on the film 33 across the region 31 is formed as a gate of an FET. Since the electrode 36 does not contact directly with the substrate 32, they are not coupled with a leakage resistance between the gates of the adjacent FETs and the substrate, but are completely isolated, and a leakage of other signal is eliminated in an IC. |
