| 摘要 |
A method for producing a MOSFET which includes the steps of forming a thick insulating layer having an inclined surface and surrounding the active region of a semiconductor substrate, forming a thin insulating layer on the active region, forming a gate electrode crossing the thin insulating layer and extending on the thick insulating layer, and forming a source region and a drain region in the active region in which method the step of forming the gate electrode includes the steps of forming a conductive layer on the thin insulating layer and thick insulating layer, forming a resist layer on the conductive layer selectively exposing the resist layer to an energy ray to define a gate electrode pattern area of which a portion above the inclined surface and above the end portions of the active region is wider than another portion above the middle portion of the active region developing the resist layer and selectively etching the conductive layer by using the developed resist layer as a mask.
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