| 摘要 |
PURPOSE:To increase degree of freedom of placing thin plates and diversify application profiles by forming the surface of susceptor on which a plurality of thin plates are arranged as the continuous concave surface for the vapor growth on the surface of thin plates of samples by the single surface heating system. CONSTITUTION:A susceptor 12 having, at the center, a nozzle 14 for introducing a mixed gas of H2 carrier gas and gas for vapor growth is provided within a reaction vessel 11 having exhaust gas outlet. A plurality of Si wafers 12' are arranged in the plane, temperature of the susceptor 12 is increased by the high frequency heating method while applying a mixed gas from the nozzle 14. Thereby, a growth layer is deposited on the wafer 12' and unwanted gas is exhausted from the exhausted gas outlet. With such structure, the surface of susceptor 12 is finished as the continuous concave surface 12a which is rotatably symmetrical to the center axis through which the nozzle 13 passes. Thereby, degree of freedom for arrangement of wafer 12' can be increased. Here, radius of curvature of concave surface 12a is determined corresponding to warpage of wafer 12'. |
