| 摘要 |
PURPOSE:To mitigate a thermal distortion to be generated according to intermittently turning ON electricity, etc., by buffers at the semiconductor device furnished with rigid bodies and electrodes to both sides of a silicon wafer interposing a brazing material between them by a method wherein the buffers are inserted between the rigid bodies and the electrodes. CONSTITUTION:The buffers 9, 10 having large heat conductivity and electric conductivity and enabled to change arbitrary thermal expansivity in the thickness direction are inserted between the copper electrodes 7 and the semiconductor substrate 1, thermal expansivity of the faces of the buffers 9, 10 thereof to come in contact with the molybdenum plates 2, 5 is approached to thermal expansivity of molybdenum, while thermal expansivity of the faces to come in contact with the copper electrodes 7 is approached to thermal expansivity of copper. As the buffers 9, 10 thereof, a composite material incorporated with a carbon fiber in a metal in a mesh type, and enabled to change arbitrary the coefficient of thermal expansion in the thickness direction can be used. |
