| 摘要 |
PURPOSE:To form a groove having a smooth groove bottom by removing a selective oxidized part and oxygen shielding films, after the substrate surface is selectively covered with the oxygen shielding films into a mask, and then a groove forming scheduled part is selectively oxidized. CONSTITUTION:The Si3N4 films 10 are deposited by vapor on the Si substrate 11, and photoetching is performed. Then, an oxygen ion implanted layer 12 is deeply provided with the films 10 as the mask. Next, an SiO2 layer 13 is formed by thermally oxidizing the layer 12. Thereafter, the layer 13 and the films 10 are removed by etching, resulting in the formation of the groove 14 of a smooth groove bottom. Then, P type diffused layers 16, N type diffused layers 17, a gate oxide film 18, and a gate electrode 19 are formed. |
