| 摘要 |
PURPOSE:To contrive to facilitate the manufacture of the titled device by using an InGaAlP crystal having high resistance as a current stricture layer. CONSTITUTION:In a current stricture type semiconductor laser constituted by laminting InGaAlP crystal clad layers 2 and 4 and an InGaP crystal active layer 3 on a GaAs crystal substrate 1, a high resistant In0.49Ga0.51-WAlWP (0.1<=W<=0.51) crystal is used as the stricture layer 27. This crystal is easy to introduce oxygen and accordingly formed as what has high resistance without particularly introducing impurity. Therefore, by using such a stricture layer, the manufacture can be easily performed, compared with that using an oxide as a stricture layer, or conventional one necessary to short-cuitcuit the stricture layer with the clad layer 4. |
