发明名称 ETCHANT FOR SILICON RESIN FILM
摘要 PURPOSE:To etch in a short time easily and moreover uniformly the silicon resin film by a method wherein the etchant is prepared of hydrofluoric acid, ammonium fluoride and a surfactant. CONSTITUTION:The etchant for the silicon resin film contains ammonium fluoride and the surfactant together with hydrofluoric acid. Hydrofluoric acid contained in the etchant is the component to participate directly in etching of the silicon resin film, and it is desirable to make to be contained as hydrogen fluoride in the etchant at concentration of the degree of 2-10wt%. As the surfactant, any matter able to reduce surface tension of water is favorable. It is desirable to make ammonium fluoride to be contained in the extent of 4-40pts. wt. per 1pts.wt. of hydrofluoric acid aqueous solution, and moreover it is desirable to make the surface-active agent to be contained in the extent of 0.004- 40pts.wt. normally although it depends upon the kind thereof.
申请公布号 JPS5931029(A) 申请公布日期 1984.02.18
申请号 JP19820140733 申请日期 1982.08.13
申请人 TOUKIYOU DENSHI KAGAKU KK 发明人 MINATO MITSUAKI;HASHIMOTO AKIRA;NISHIMURA TOSHIHIRO;NAKAYAMA MUNEO
分类号 H01L21/308;H01L21/306;(IPC1-7):01L21/306 主分类号 H01L21/308
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