| 摘要 |
PURPOSE:To obtain a photoelectric conversion device of high withstand voltage by combining a single crystal semiconductor with a non-single crystal semiconductor. CONSTITUTION:An Si having the plane (100) is used as the single crystal semiconductor. Buried semiconductor regions 8 and an N type semiconductor layer 7 are formed on a P type semiconductor on a substrate 1. Next, an Si oxide film 4 and P type semiconductor layers 2 are formed. The N type non-single crystal semiconductor layer 12 is formed, and then a clear conductive film 13 is formed. Thereat, the film 13, the layer 12, and an I-layer 11 are etched by a photo mask. Finally, an emitted lead 14 is manufactured by means of the film 13 which composes the emitter. |
