| 摘要 |
PURPOSE:To contrive to facilitate the manufacture of the titled device by using an InGaAlAs crystal as a current stricture layer. CONSTITUTION:In a current stricture type semiconductor laser formed by laminating clad layers 2, 4 and an active layer 3 composed of InP crystals on a substrate 1 composed of an InP crystal, the In0.53Ga0.47-yAlyAs (0.2<=y<=0.47) crystal which has high resistance is used as the stricture layer 27. This crystal is easy to introduce oxygen and accordingly formed as what has high resistance even without particularly introducing impurity. Thereby, the simplification of the manufacture can be contrived, compared with what is necessary to short-circuit the clad layer 4 with the stricture layer, or conventional one using an oxide as the stricture layer. |
