| 摘要 |
PURPOSE:To improve the physical characteristics of a multilayer structure film, by introducing a subject material gas, an object material gas and externally-activated hydrogen into a reaction space and by controlling the amount of the introduced object material gas periodically. CONSTITUTION:In a multilayer structure film composed of layers of two kinds or more, such as a multilayer film formed by superposing alternately layers to two kinds having different physical properties, the thickness of each layer is set to be 10-200Angstrom . The amount of introduction of an object material gas, a component of a small flow rate, into a reaction space is set to be 1/2a or below to the amount (a) of introduction of a subject material gas, a component of a large flow rate, into the reaction space. Moreover, an active speed of hydrogen is introduced into the reaction space, and thereby the amount of the active seed is controlled. A silicon compound, such as SiF4 or SiCl4, or the like is used as the subject material gas, and a germanium compound such as GeF4 or GeF2Cl2 or carbon compound such as CF4 or C2F6CCl4 is used as the object material gas. In addition, a GeF4 gas of a prescribed flow rate is always introduced into a chamber intermittently in accordance with an electric signal. |
