| 摘要 |
The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is projected on the wafer in this state so as to heat it. According to the present invention, only the wafer is heated and, hence, the wafer can be heat-treated uniformly and efficiently with great precision. |
