| 摘要 |
PURPOSE:To prevent the generation of an offset voltage when a switching circuit is in OFF state by a method wherein the gate electrode region of the first junction type field effect transistor and the source electrode region of the second J-FET are electrically connected to an isolated region or the first substrate region respectively, and an electrode construction, wherein the source electrode region of the first J-FET and the drain electrode region of the second J-FET are electrically connected, is formed. CONSTITUTION:A resistor R2 is the one which is inserted between a gate terminal 4a and the eathed point of the first J-FET Q1 for the purpose of giving an OFF position to it, and a capacitor C indicates the capacitance which is present between the gate and the source of the second J-FET Q2. A prescribed control voltage V is to be applied to a terminal 3 to give an OFF position to the first J-FET Q1. If this control voltage V is in excess of the sum of the pinch- off voltage VP of the first J-FET Q1 and the breakdown voltage value V2 of the P<+>-N-P junction constant voltage element located between both gates of the second J-FET Q2 and the first J-FET Q1, which is IVI>IVp+VZI, both J-FETs Q1 and Q2 are turned to complete OFF state, no voltage is generated on the side of an output terminal 2. |
