| 摘要 |
PURPOSE:To obtain the semiconductor device having a working layer of uniform thickness under a gate by a method wherein the resistance from a source electrode, a drain electrode and to an intrinsic FET is reduced by providing a Schottky electrode, to be formed above a semiconductor active layer, and an ohmic electrode to be formed on a high impurity density semiconductor layer whereon a semiconductor active layer and a hetero-junction are formed. CONSTITUTION:A low resistance semiconductor layer 12, which will be turned to an active layer, is formed in desired density and thickness is formed on a GaAs substrate 11, and a high impurity density (N<++>) semiconductor layer 13, wherein a heterogenous semiconductor material is used to enable to make a hetero-junction with the layer 12, is formed on the same plane surface as a gate electrode 14. According to this constitution, when the concavity for formation of the gate electrode 14 is going to be formed, the gate forming process can be simplified in a high degree because the layer 13 only of the gate formation region can be selectively removed. Also, as the carrier density and thickness of the layer 12 can be accurately formed in advance and a subsequent thickness adjustment is unnecessary, the accuracy of the IDSS value and VP value of FET can be made in remarkably excellent manner. |
