| 摘要 |
PURPOSE:To reduce the threshold current making lateral mode stable in a semiconductor device of single heterojunction type with high light emitting output by a method wherein an active layer is divided into p type and n type regions with high concentration providing the boundary thereof with the differences both in the electron energy levels and the refractive indices and connecting the regions agains mainly in the p type region of p-n junction to close the carrier while the light is also closed in the vertical direction simultaneously forming the shape of p-n junction into curved surface of a downward convex part and converging the light on the central part to prevent multiple modes from happening. CONSTITUTION:A GaAlAs active layer 12 including n type impurity, a GaAlAs clad layer 13 including n type impurity, a GaAlAs layer 15 including p type impurity and an n GaAs contact layer 16 are laminated on an n GaAs substrate 11 by means of liquid epitaxial growth and a mask of SiO2 glass films 19 is formed on the contact layer 16 to heattreat a mixture of ZnAs2 and As as a source forming the specified p-n junction 14 by means of coating the contact layer 16 with the glass film 19 again for performing the heattreatment. |
