发明名称 Circuit for controlling power switching transistors with galvanic separation
摘要 For controlling a power switching transistor (MST), two non-ideal electric generators (Ig1, Ig2), three transformers (TR1, TR2, TR3), diodes and other necessary passive elements are used. The turning on or off of the power switching transistor depends on the signals (VH1, VH2, VH3) at the input of bipolar transistors (T1, T2, T3). If the bipolar transistors conduct alternately, electric generators (Ig1, Ig2) feed the transformers, which supply the current via galvanically separated windings for turning on the power switching transistor. For turning off the power switching transistor (MST), the third transistor (TR3) activates the third transformer, which forms a voltage with directly opposite polarity at the base of the power switching transistor and thereby turns it off. Diodes in the circuit of the third transformer prevent leaking away of the base current when the power switching transistor is turned on. <IMAGE>
申请公布号 DE3329437(A1) 申请公布日期 1984.02.16
申请号 DE19833329437 申请日期 1983.08.16
申请人 ISKRA-SOZD ELEKTROKOVINSKE INDUSTRIJE N.SOL.O. 发明人 KOSMAC,MIRAN
分类号 H03K17/60;(IPC1-7):H03K17/60 主分类号 H03K17/60
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