| 摘要 |
PURPOSE:To obtain the semiconductor device having the ohmic contact of very low resistance by a method wherein a semiconductor layer same as a working layer is provided on the heterogenous semiconductor layer whereon the working layer and a hetero -junction will be formed. CONSTITUTION:An active layer 2 is grown on a GaAs semiinsulating substrate 1, a heterogenous semiconductor, whereon a hetero-junction will be formed, such as a Te- doped GaAlAs layer 3 and a GaAs layer 4, are continuously grown. Then, after an element isolation has been performed by implanting a B-ion, a PR mask film 5 to be used for the aperture of a gate electrode is provided, and an etching is performed on a part of the GaAs layer 4 and the GaAs layer 3 located below the layer 4. Then, the GaAlAs layer is removed using an HF etching solution, and the PR mask film is removed. Subsequently, material such as Al, for example, which will be turned to a Schottky barrier gate electrode, is vacuum-deposited on the whole surface. After the PR mask has been coated on the gate electrode part, the Al coated on the region other than the gate electrode part is removed by performing an etching, and a gate electrode 6 is formed. Then, source and drain electrodes 7 and 8 are formed on the GaAs layer 4 using a lift-off method, and an ohmic electrode is then formed by performing a heat treatment. |
