| 摘要 |
PURPOSE:To obtain the light-emitting element having a light-emitting diode and its driving element monolithicly integrated on the semiconductor substrate using the material of InGaAsP mixed crystal whereon a high resistivity semiconductor layer is hardly formed. CONSTITUTION:On both sides of an N type InP semiconductor substrate 31, the second semiconductor layers 321 and 322 of approximately 2 mum in thickness consisting of N type InP, the third semiconductor layers 331 and 332 of approximately 2mum in thickness consisting of N type InP, the third semiconductor layers 331 and 332 of approximately 1mum in thickness consisting of In1-xGaxAsyP1-y,the fourth semiconductor layers 341 and 342 of approximately 1mum in thickness consisting of P type InP, and the fifth semiconductor layers 351 and 352 of approximately 1mum in thickness consisting of N type In1-zGazAswP1-w are formed by performing a vapor-phase growing method. When a positive voltage is applied to an electrode 38, electrons are induced on the interface where the P type semiconductor layer 342 and an insulating from 37 come in contact with each other, an electron current runs from an electrode 39 and along the interface of the insulating film and the semiconductor layer, and the electrons are injected to the semiconductor layer 331 of a light-emitting part 21 which is an active layer. Also, a hole current runs from an electrode 42 through an impurity diffusion layer 40, said hole current is injected to the semiconductor layer 331, a light emission is generated by the recoupling of the electron and the light is picked up to outside. |
