| 摘要 |
PURPOSE:To form the thin film optical integrated circuit of high integration by a method wherein a thin film optical waveguide layer is provided on a semiconductor substrate and, at the same time, a photo-detecting section of heterogenous junction is formed on the interface of said optical waveguide layer. CONSTITUTION:The semiconductor substrate consists of at least a kind of a IV-group semiconductor such as Si, Ge and the like and a III-V group semiconductor such as GaAs, GaAlAs, GaP, InP and the like. Besides, the thin film optical waveguide layer consists of at least a kind of Zn, ZnSe, ZnS, CdO, CdSe, Cds and the like. In order to improve the optical transmission property of the above optical waveguide layer, a buffer layer 21 having the index of light refraction smaller than that of the thin film optical waveguide layer 12 is to be interposed. In this case, if the buffer layer 21 is electrically insulative, the reverse bias current of heterogenous junction is reduced, photovoltaic force is increased, and it can be used effectively as the substrate 20 which will be used for the thin film optical waveguide path of the type above-mentioned. |
