发明名称 FORMATION OF MAGNETIC THIN FILM
摘要 PURPOSE:To widen the temperature range for forming a magnetic thin film and increase the production yield, by a method wherein a magnetic thin film is formed on a low-melting point material by evaporation or sputtering and is then annealed in a magnetic field with substantially the same degree of vacuum maintained. CONSTITUTION:A permalloy thin film is formed at a predetermined substrate temperature by a high-rate sputtering method and is then annealed in an applied DC magnetic field of 100 Oe at the same substrate temperature and in the same vaccum chamber as those in the formation of the film. It is possible to lower the substrate temperature to about 100 deg.C in order to obtain required magnetic properties. The allowable temperature width can be increased more than twice as much as that in the conventional annealing method, and this method is effective in increasing the production yield in formation of a permalloy thin film.
申请公布号 JPS5929410(A) 申请公布日期 1984.02.16
申请号 JP19820138627 申请日期 1982.08.11
申请人 DENSHI KEISANKI KIHON GIJUTSU KENKIYUU KUMIAI 发明人 YOSHIDA TOSHIHIRO;SUENAGA MASAHIDE;TAKAGI MASAYUKI
分类号 G11B5/31;H01F41/14;H01F41/16;H01F41/18;H01F41/20 主分类号 G11B5/31
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