| 摘要 |
1293152 Solid-state switches ENERGY CONVERSION DEVICES Inc 28 Oct 1969 [4 Nov 1968 13 March 1969] 52760/69 Heading H1K A solid-state element switchable by a voltage above a threshold from a high to a low resistance state consists of an electrode carrying an insulating layer having a pore, preferably 5-40 Á in diameter, . into which switchable semiconductor material extends, and a further electrode over the pore. At least one of the electrodes must be of amorphous refractory material such as molybdenum, niobium, tantalum, tungsten, molybdenum carbide, vanadium sulphide or other carbide, oxide or sulphide of a refractory metal. Typically, Fig. 4, the electrodes 20, 22 extend in opposite directions from the pore on a glass substrate 23. Insulating layer 14<SP>1</SP> and reinforcing layer 26 are of alumina, and the semi-conductor is one of the amorphous semi-conductors referred to in Specifications 1,070,411 and 1,070,412. Each layer of the device is formed by depositing material overall and reducing to the required form by photoresist and etching steps. In another arrange ment with differently shaped electrodes (Fig. 7, not shown) aluminium contacts are deposited on exposed areas of the electrodes and the reinforcing layer overlies the main insulation. A similar device may be formed on the oxide passivation of a silicon integrated circuit with its lower electrode contacting an aluminum electrode of the circuit via a hole in the passivation. Alternatively, to avoid a current carrying interface with the readily oxidizable aluminium the latter is extended out of the hole and on to the lower electrode In such devices an aluminium track extends on the insulation to electrically contact the upper electrode, which is constructed as in Figs. 8 or 11 (not shown) to form a barrier preventing diffusion of aluminium into the semi-conductor. Improved devices are obtained by subjecting the lower electrode and overlying insulation to ion bombardment in the R.F. sputtering apparatus immediately prior to deposition of the semi-conductor and upper electrode material. |
