| 摘要 |
A semiconductor structure suitable for making a non-volatile memory comprises an electrically conducting substrate, at least two layers of different conductivity type selected from i, p and n-type amorphous or microcrystalline semiconducting material and an additional defect layer of amorphous or microcrystalline semiconductor material located between two of the said different layers. The defect layer reduces the voltage required to transform the structure to a memory device. |
