| 摘要 |
PURPOSE:To obtain an ohmic contact by eliminating the necessity for etching process through such an arrangement wherein when a metal wiring which is to make ohmic contact is installed to a P-N junction formed on a semiconductor substrate, an opening is drilled at an arbitrary position on the P-N juction, and after the wiring is installed to the opening, the wiring is annealed by irradiating a laser light on the wiring including the opening. CONSTITUTION:On a semiconductor substrate 1, a source area 2, etc. surrounded by a thick field SiO2 film are formed and a P-N junction is caused to generate between the substrate 1 and the film and an opening 8 is drilled in an insulation SiO2 film 4' covering the entire surface, and an Al wiring 11 is caused to adhere to cover from exposed part of the area 2 to the film 4 and 4'. Next, a laser light 12 radiated the wiring 11 so that part of spot of the laser light covers the wiring, and the section 7 of the substrate which absorbs laser light 12 is made high temperature and wiring 11 in the vicinity is melted. Al 13 is caused to penetrate deeply into the area 2 and a good ohmic contact is obtained. |
