| 摘要 |
PURPOSE:To obtain a semiconductor wafer which is less influenced by heat by such an arrangement wherein the back of the semiconductor wafer of which temperature is raised by the irradiation of ion beam is caused to closely contact with a metal plate which is cooled by an electronic cooling method through an elastic body which is pasted to the metal plate, and the rise of temperature of the wafer is reduced. CONSTITUTION:A P type semiconductor 5 is joined with an N type semiconductor 6 by using metal plates 7 and 8 and they are made as a Peltier effect element wherein cooling takes place in the metal plate 7 and heat is generated in the metal plate 8 when a DC current is caused to flow through. Next, an elastic body 3 is pasted to the surface of the metal plate 7, and a wafer 3 of which temperature rises by the irradiation of ion beam is placed on it with its back faced downward and the wafer is cooled by fixing its circumferece with a fixing metal fixture 4. At this time, as heat is generated in the metal plate 8, heat is discharged by installing a radiating plate to the metal plate and cooling force at the cooling side is further made larger. This is especially effecitive when ion of high density is implanted. |
