METHOD OF PRODUCING N-CONDUCTIVITY LAYERS IN SILICON,申请号SU19772467255-传众专利搜索

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发明名称	METHOD OF PRODUCING N-CONDUCTIVITY LAYERS IN SILICON
摘要
申请公布号	SU649270(A1)	申请公布日期	1984.02.15
申请号	SU19772467255	申请日期	1977.03.29
申请人	INSTFIZ VYSOKIKH ENERGIJ AN KAZSSR	发明人	GORELKINSKIJ YU.V.,SU;BOTVIN V.A.,SU;SIGLE V.O.,SU;NEVINNYJ N.N.,SU;CHEKANOV V.N.,SU
分类号	H01L21/263;(IPC1-7):H01L21/26	主分类号	H01L21/263
代理机构		代理人
主权项
地址

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