Structure and process for lift-off wafer processing.

摘要

An improved lift-off process for forming metallized interconnections between various regions on a semiconductor device relies on the use of a particular polyimide in forming a protective mask over the device. The polyimide is a copolymer of an aromatic cycloaliphatic. diamine and a dianhydride which allows the resulting structure to withstand particularly high temperatures in the fabrication process. In particular, the polyimide when subjected to high temperature metallization under vacuum remains sufficiently soluble to be substantially completely removed from the device by immersion in common organic solvents. This allows high temperature metallization as interconnects for integrated circuits.