发明名称 RIE Apparatus utilizing a shielded magnetron to enhance etching
摘要 A dry etching apparatus for semiconductor wafers has a decompression vessel, the inside of which is divided by a separating wall into a discharge room and a shield room. The discharge room has a pair of elecrodes between which RF electric power is applied. One of the electrodes is placed at the separating wall and supports the wafer which is to be etched. A magnet assembly in the shield room generates a magnetic flux in the discharge room which perpendicularly intersects the electric field between the electrodes. A reactive gas is introduced into the discharge room, however, no discharge occurs, because its pressure is maintained below that required for discharge. This results in a reduced consumption of electric power, less heating, and less damage to the resist mask on the wafer.
申请公布号 US4431473(A) 申请公布日期 1984.02.14
申请号 US19820396123 申请日期 1982.07.07
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 OKANO, HARUO;HORIIKE, YASUHIRO
分类号 C23F4/00;H01J37/16;H01J37/34;H01L21/00;H01L21/302;H01L21/3065;H01L21/677;(IPC1-7):C23C15/00 主分类号 C23F4/00
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