发明名称 |
RIE Apparatus utilizing a shielded magnetron to enhance etching |
摘要 |
A dry etching apparatus for semiconductor wafers has a decompression vessel, the inside of which is divided by a separating wall into a discharge room and a shield room. The discharge room has a pair of elecrodes between which RF electric power is applied. One of the electrodes is placed at the separating wall and supports the wafer which is to be etched. A magnet assembly in the shield room generates a magnetic flux in the discharge room which perpendicularly intersects the electric field between the electrodes. A reactive gas is introduced into the discharge room, however, no discharge occurs, because its pressure is maintained below that required for discharge. This results in a reduced consumption of electric power, less heating, and less damage to the resist mask on the wafer.
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申请公布号 |
US4431473(A) |
申请公布日期 |
1984.02.14 |
申请号 |
US19820396123 |
申请日期 |
1982.07.07 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
OKANO, HARUO;HORIIKE, YASUHIRO |
分类号 |
C23F4/00;H01J37/16;H01J37/34;H01L21/00;H01L21/302;H01L21/3065;H01L21/677;(IPC1-7):C23C15/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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