| 摘要 |
SEMICONDUCTOR DEVICES HAVING IMPROVED LOW-RESISTANCE CONTACTS TO p-TYPE CdTe, AND METHOD OF PREPARATION There are disclosed a semiconductor device comprising a layer of polycrystalline p-type CdTe and a variety of metals in low-resistance contact, and a process and preferred etchant for obtaining the contact. A layer comprising tellurium is provided between the metal contact and the layer of p-type CdTe. The surface portion of the CdTe layer adjacent to the tellurium-containing layer is cadmiumdeficient, and the grain boundaries of the CdTe layer are preserved intact. |
