发明名称 |
DIODE AND EEPROM DEVICE USING SAME |
摘要 |
<p>A diode has at least a first region and a second region with the regions abutting each other to form a junction therebetween and with the first region being made of an amorphous alloy including silicon and fluorine. Such a diode finds particular usefulness in closed cells in a ROM or in a EEPROM device having a memory circuit at each cross over point of a conductor of a first group of conductors in a memory matrix extending in a first direction over a conductor of a second group of conductors extending in a second direction traversing the first direction. The first group of conductors is insulated from the second group of conductors and each memory circuit is coupled to and between a pair of crossing over conductors at one of the cross over points and includes a memory region and the diode. Preferably, the amorphous alloy also contains hydrogen and such alloy is a-Sia:Fb:Hc, where a is between 80 and 98 atomic percent, b is between 0 and 10 atomic percent and c is between O and 10 atomic percent. The first and second alloy regions of can be oppositely P and N doped. Alternately, one of the regions can be a metal, metal alloy or a metallic like material to form a Schottky barrier with the other region or MIS junctions can be utilized.</p> |
申请公布号 |
CA1162327(A) |
申请公布日期 |
1984.02.14 |
申请号 |
CA19830430399 |
申请日期 |
1983.06.14 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
HOLMBERG, SCOTT H.;FLASCK, RICHARD A. |
分类号 |
G11C17/00;G11C13/00;H01L21/331;H01L21/8229;H01L21/8247;H01L23/525;H01L27/06;H01L27/102;H01L27/105;H01L27/24;H01L29/04;H01L29/167;H01L29/68;H01L29/73;H01L29/78;H01L29/786;H01L29/788;H01L29/792;H01L29/861;H01L45/00;(IPC1-7):H01L45/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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