| 摘要 |
PURPOSE:To easily micro-miniaturize a thick glass deposited film by depositing an insulating film on a glass resist film, applying a photoresist thereon, executing the pattering by photo etching method, removing a resist component and an insulating film, and thereafter baking a glass resist film. CONSTITUTION:A glass resist agent is applied to the entire part of semiconductor substrate 11 and a glass resist film 12 is formed while it is heated up to a temperature of 150 deg.C-200 deg.C in order to obtain good contactness with substrate. An insulating film 13 which can be formed at a lower temperature than the carbonization of resist agent is formed and a photo resist film 14 for photo etching of such insulating film is deposited this insulating film 13. In the process where the insulating film 14 is etched by the photo etching, the ultraviolet ray 15 for exposure is absorbed by the photo resist 14 and insulating film 13. Thereby, the ultraviolet ray almost does not reach the glass resist film 12 in the lower layer and the glass resist film 12 is not exposed. Thereafter, the photo resist 14 is developed. |
