| 摘要 |
In a semiconductor memory device of the present, due to a heavily doped region formed on the semiconductor substrate, the depletion layer does not spread deeply toward the interior of the semiconductor substrate. In addition, a capacitor is formed by the heavily doped region, an insulating film formed on this region and a semiconductor layer formed on this insulating film. As a result, variation of capacitance of the capacitor due to alpha -ray particles is low. Furthermore, information is stored in the semiconductor layer which is formed above the semiconductor substrate so that the occurrence of a soft error is minimized.
|
