| 摘要 |
PURPOSE:To eliminate the effects of deviation of the output voltage and the temperature characteristics, by providing semiconductor elements of the number equal to the number of stages of a transistor (TR) which has a voltage drop from the reference voltage to the emitter voltage ot an output TR to a reference voltage circuit. CONSTITUTION:The base voltage of a TR QE of a reference voltage circuit 2' is higher than the reference voltage Vref by a degree equal to the sum of base- emitter voltage of TRs QX, QY and QZ. While the emitter voltage of an output TR QF of an emitter follower type constant current circuit 3 is lower than the base voltage of the TR QE by a degree equal to the sum of base-emitter voltage of TRs QE, QC and QF. Therefore the absolute value of base-emitter voltage can be eliminated for each chip despite the fluctuation of said absolute value as long as the sum is set at the same value for those base-emitter voltage levels. This can eliminate the effect of the fluctuation of the backward saturated current of a TR due to the variation of the process conditions for production of an IC, i.e., the effect of deviation of the base-emitter voltage. |
