| 摘要 |
PURPOSE:To obtain a semiconductor device which has excellent thermal conductivity and good workability and is constructed by bonding via a resin-impregnating sheet by placing an element through a metal fabric impregnating bonding resin on an element placing part of a container. CONSTITUTION:An aluminum fine wire fabric is formed, impregnated with epoxy resin, semicured, and solid epoxy resin imprgnating sheet 5 is formed. The thickness of the sheet is approx. 0.1-0.5mm., and when semicured resin sheet of solid state at ambient temperature is used, it can be readily handled, and simply bonded. When a container placed in a recess 1' of a substrate 1 of a container is heated to 100-200 deg.C and a semiconductor element 3 is superposed and pressure contacted on the resin-impregnating metal wire fabric sheet 5, it is bonded by softened resin, with the result that the element 3 is bonded through the sheet 5 to the substrate 1 of the container. |
