SEMICONDUCTOR SUBSTRATE, MANUFACTURE THEREOF AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE:To improve the heat sink of a semiconductor substrate and to prevent the generation of the crack of a pellet by using as a base silicon carbide having high specific resistance value and forming a single crystal silicon layer on the base, thereby increasing the mechanical strength. CONSTITUTION:A semiconductor substrate 10 has a base 11 made of silicon carbide including high specific resistance and a silicon layer 12 formed on the surface of the base 11. The silicon carbide which forms the base 11 mainly contains silicon carbide, and several percentage by weight of at least one of beryllium oxide and boron nitride, and the mixture is sintered. The base 11 is obtained by polishing the surface of a silicon carbide plate in a mirror surface. A thin film silicon layer 12 which is grown by thermally decomposing monosilane is formed on the surface of the base 11. Since the layer 12 is formed with the base 11 in a polycrystalline restructure, it is formed as a polycrystalline silicon layer.