| 摘要 |
PURPOSE:To form the predetermined tilt at the internal wall surface of aperture of insulating film and prevent disconnection of wiring at the stepped portion by irradiating the surface of insulating film of semiconductor wafer with plasma and executing the patterning thereto by the wet etching method. CONSTITUTION:The surface of an oxide film 2 of base material is irradiated with plasma by a plasma apparatus and thereby plasma damage layer 2' is formed. After the processing by surface modification agent in order to prevent abnormal side etching, the patterning is executed. As the condition of wafer after the wet etching, the desired tilt can be obtained at the internal wall surface 5' of the aperture 5 of oxide film to be formed below the aperture 4 of resist 3. This tilt can be set at the desired angle within the range of 15-45 deg. which is effective to prevent disconnection of interlayer wiring at the stepped portion in accordance with gas flow ratio, irradiation power and control of irradiation time during irradiation of plasma and amount of etching of oxide film can be controlled to several Angstrom or less under such irradiation condition. |
