| 摘要 |
PURPOSE:To stably obtain single crystal having a strict stoichiometric component in case of performing growth of single crystal of a compound semiconductor by a three-temp. horizontal Bridgman's method by using a heat pipe and performing temp. control of an componental element having high dissociation pressure and performing control of vapor pressure of the inside of a reaction pipe. CONSTITUTION:In a three-temp. horizontal Bridgman's method, in other words, a boat 4 housing melt (AB)l of single crystal and a componental element B of a raw material having high dissociation pressure are respectively arranged in each partitioned chamber of a reaction pipe 1 divided into two chambers by a partition 3 positioned in the intermediate part and the reaction pipe 1 is transferred in the inside of a furnace having three-plateau parts for the temp. distribution in the horizontal direction and thereby single crystal of a compound semiconductor is produced. At this time, a heat pipe 10 is fitted to an outside peripheral part of a partitioned chamber of the reaction pipe housing the element B having high dissociation pressure and both temp. control and control of vapor pressure of the inside of the reaction pipe 1 are performed via this heat pipe 10.
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