发明名称 APPARATUS FOR EPITAXIAL GROWTH IN LIQUID PHASE
摘要 PURPOSE:The titled apparatus, having plural piled units having substrate holders and raw material solution holding plates, and capable of moving the substrate holders and giving plural sheets of multilayered epitaxial wafers. CONSTITUTION:Substrate crystals (44a)-(44c) are contained in recesses (33a)- (33c) for containing substrates of laminated substrate holding plates (30a)-(30c), and a raw material solution is introduced into preparative tanks (361)-(365) for the raw material solution. The holding plates (30a)-(30c) are moved to make the recesses (33a)-(33c) opposite to holding tanks (341a)-(341c) for the first raw material solution (371) and the preparative tank (361) for the first raw material solution (371) is communicated to the holding tanks (341a)-(341c) for the first raw material solution (371). A pressure is applied to first raw material solution (371) to fill the holding tanks (341a)-(341c) for the first raw material solution (371) from the lower stage one after another. The first raw material solution (371) is brought into contact with substrate crystals (44a)-(44c). After forming the first epitaxial growth layer, the substrate holding plates (30a)-(30c) are moved to separate the first raw material solution (371) from the substrate crystals (44a)-(44c). The epitaxial growth layers of the second layer and thereafter are formed in the same way.
申请公布号 JPS5926997(A) 申请公布日期 1984.02.13
申请号 JP19820133338 申请日期 1982.07.30
申请人 SUMITOMO DENKI KOGYO KK 发明人 SASAYA YUKIHIRO
分类号 C30B19/06;H01L21/208 主分类号 C30B19/06
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