| 摘要 |
1298866 Semi-conductor devices; image pick-up tubes PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 1 May 1970 [6 May 1969] 21111/70 Headings H1D and H1K A target plate for a television camera tube comprises a semi-conductor plate having a mosaic of regions forming junctions with a substrate of the opposite conductivity type, the regions being separated by grooves containing insulating material which covers the surface of the substrate and the edges of the junctions but does not completely fill the grooves. A first embodiment, Fig. 2, is produced by depositing B 2 O 3 on one face of an N-type Si substrate 10, heating to diffuse-in B, and etching to remove the surface oxides. The surface is then masked with a layer of Si 3 N 4 in which windows are formed by utilizing a SiO 2 and photoresist masking and selective etching technique. Grooves 12 are then etched in the Si surface to divide the diffused layer into a mosaic of separate circular regions 11. The wafer is then heated in N 2 saturated with water vapour to form oxide layers 15 on the surfaces of the grooves and the remaining Si 3 N 4 masking layer is removed by selective etching. In a modification, Fig. 9 (not shown), SiO 2 is utilized instead of Si 3 N 4 as the etching mask, and after oxidizing the surface of the grooves the wafer is coated with photoresist which forms a thinner layer on the mesas than in the grooves. After a brief exposure the thin part of the photoresist can be removed to enable the masking layer on top of the mesas to be etched away leaving the oxide layers in the grooves untouched. In another modification, Fig. 10 (not shown), Rh is used as the etching mask, this being provided electrolytically after diffusing-in B. This metal layer is not removed after the oxidizing step since it overhangs the grooves and helps prevent the electron beam from charging the surface of the oxide layer in operation. The surface walls of the grooves may be highly doped the same conductivity type as the substrate by diffusion after forming the grooves but before oxidation, Fig. 11 (not shown). The oxidation of the walls of the grooves may occur during this diffusion step. In another variation the grooves may be formed and oxidized and the etching mask removed before diffusing-in impurities to form the active regions 11. An impurity may be diffused into the lower face of the wafer to reduce surface recombination, Fig. 12 (not shown), and during the diffusion a doped oxide layer may be formed which aids this effect. Alternatively the lower face may be merely oxidized, Fig. 13 (not shown), and this may be performed simultaneously with the oxidation of the grooves. The mosaic elements may have a transistor structure Figs. 14 and 15 (not shown). The semi-conductor material may be Si, Ge or a III-V compound, and may be formed as a layer on an insulating transparent substrate. The insulating layer in the grooves may be coated with phosphate glass or a resistive layer, e.g. of PbO, Sb 2 S 3 or GaAs to allow charge built up on the oxide by the scanning beam to leak away. |
