| 摘要 |
PURPOSE:To prevent a short circuit, to reduce the electric resistance of a connecting section and to improve adhesive property by using an organic resin as an inter-layer insulating film, coating the insulating film and the etching the exposed section of a wiring layer as a lower layer and the surface of the insulating film by mixed-gas plasma of SF6 and O2. CONSTITUTION:The first layer Al electrode wiring layer 2 is formed to the surface of a silicon substrate 1 and a polyimide layer 10 is applied, and an opening section 4 for inter-layer connection is formed through photoetching. The surface is dry-etched slightly in gas plasma of SF6 and O2, a second layer Al layer 5 is formed instantaneously, and the surface is photo-etched. The plasma treatment removes organic matter from the surface of the layer 10 while displaying an effect which removes an oxide, etc. generated on the surface of the opening section 4 through etching. Contact resistance between the layers 2 and 5 is reduced by the effect while the mechanical adhesive strength between the layer 10 as the inter-layer insulating film and the layer 5 can be improved. |
