| 摘要 |
PURPOSE:To improve the degree of integration as a whole, and to facilitate manufacture by using both P type and N type semiconductor layers as electrodes and forming an electrode wiring connecting to all regions existing in an element by a semiconductor layer. CONSTITUTION:A polycrystalline silicon thin-film 3 is formed to the surface of one conduction type semiconductor substrate 1 coated with an oxide film 2 with an opening, polycrystalline silicon electrode wiring paths 5, 6 isolated by a silicon oxide 4 through selective oxidation treatment are formed, and reverse conduction type impurity atoms are introduced into the semiconductor substrate through a desired electrode section 5 to form a P-N junction 7. Accordingly, the substantially extremely minute semiconductor device can be obtained because three of the P-N junction 7 and the electrode wirings 5, 6 to each N type and P type region keep automatically minimum distances and are arranged relatively. |
