| 摘要 |
PURPOSE:To improve the punch-through dielectric resistance by forming a thick field oxide film, implanting impurity ions through the film, forming a channel stopper and using an impurity layer the same as the channel stopper as the punch through stopper of a MOSFET. CONSTITUTION:A p-layer 8 as the channel stopper is formed through implantation through the thick field oxide film 9 of boron ions having high energy. A p-layer 10 formed through the implantation of ions having high energy exists in the deep section of the inside of an element region. When the MOSFET is formed in the element region, an effect on element characteristics of the p-layer 10 is little because a region within approximately 0.5mum from the surface of a silicon substrate relates to the operation of an element. The layer 10 reduces a short channel effect when the channel length of the MOSFET is shortened, and fills the role of the punch through stopper for improving punch-through dielectric resistance. |
