| 摘要 |
PURPOSE:To increase the degree of integration as well as to perform a high- speed operation without increasing the occupation area of an aperture forming part by a method wherein a contact etching is performed on a part of the upper surface of a buried insulating film including the region wherein reverse conductive type impurities have been introduced. CONSTITUTION:A buried insulating film (silicon oxide film) 103 is formed on a main surface of a one-conductive type semiconductor substrate (P type silicon single crystal substrate) 101. Reverse conductive type impurities (phosphorus) are introduced into the region (N type region) 104 which is located adjoining to the insulting film 103 on a main surface. A contact etching is performed on a part of the insulating film 103 including the region 104. At this time, a part of the aperture is to be positioned on the upper surface of the insulating film 103, and the end part of the upper surface of the region 104 is exposed by the formation of the aperture. Then, reverse conductive impurities are introduced into the exposed region 104. A metal wiring 112 is formed in such a manner that it is extended from the region 104 to the upper surface of the insulating film 103. |
