发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a logical circuit having a large driving force with a low level of electric power, by combining a pMOS transistor TR, an nMOS TR and an npn bipolar TR. CONSTITUTION:When the potential of an input terminal 1 is set at OV, a pMOS TR4 is turned on. Thus a current flows to the base of an npn TR7, and therefore the TR7 is turned on. while an npn TR8 is turned off since the potential of its base is set at OV. As a result, the voltage of an output terminal 2 rises up. When the potential of the terminal 1 is set at the positive power supply voltage, a current flows to the base of the TR8. At the same time, a TR5 is turned on to discharge quickly the base storage charge. This eliminates a current which flows steadily to a TR circuit and therefore secures a large output amplitude.
申请公布号 JPS5925423(A) 申请公布日期 1984.02.09
申请号 JP19820135142 申请日期 1982.08.04
申请人 HITACHI SEISAKUSHO KK 发明人 HIGUCHI HISAYUKI;HONMA NORIYUKI;ISHIKAWA MICHIO
分类号 H03K19/08;H01L21/8249;H01L27/06;H03K17/04;H03K19/0944 主分类号 H03K19/08
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