| 摘要 |
PURPOSE:To contrive to change a device into a high density one by a method wherein a gate electrode so reinforced in dynamical manner that the fine part thereof inclines to the first region which can compose the source or drain is provided. CONSTITUTION:A field insulator 2 is formed on a semiconductor substrate 1, and the first region consisting of the first layer 30, a dielectric layer 31 and an opposed layer 32 is formed thereon. Next, an insulation film 4 is formed, then apertures 41 and 42 are formed. Then, a film 5 is formed, and second region 13 is formed by ion implantation. An insulator 44 is formed by oxidation, and triangular layers 6 and 8' are formed at the side periphery of the first region 3. This layer 6 is decided as the gate electrode. Finally, after removing the layer 8', a lead 9 and a contact 45 are formed at the same time with the gate electrode 6. |
