| 摘要 |
PURPOSE:To contrive improvement in the yield rate for the titled silicon wafer by a method wherein the microscopic impurity aggregate, which can not be removed by the conventional method, is gettered by performing a high temperature annealing on the silicon wafer in a non-oxidizing atmosphere. CONSTITUTION:A high temperature annealing 6 is performed on the silicon wafer whereon a lapping process or an etching process has been peformed. By the performance of said annealing, the microscopic impurity aggregate is concentrated on the suface layer which is the absorbing place of defects, and as a result, leaving the center part, a non-defective region is formed. Subsequently, an etching is performed on both sides of the wafer, and the part in 5-10mum from the surface is removed. Lastly, a mirror-face finish 5 is performed. |
