| 摘要 |
The line width of the alignment pattern on a mask is sufficiently narrow so that on exposure of a resist covered wafer to the mask the mask pattern is transferred to the resist but the alignment mark is not. The pattern of the mask is formed so that the line width of the alignment pattern is thin as compared with that of the actual element pattern, so that the exposure amount, in the alignment pattern portion on the resist is high due to diffraction phenomenon and thus, the alignment pattern of the mask is not transferred onto the wafer. |
