发明名称 Substrate for semiconductor apparatus.
摘要 <p>This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.</p>
申请公布号 EP0100232(A2) 申请公布日期 1984.02.08
申请号 EP19830304301 申请日期 1983.07.25
申请人 SUMITOMO ELECTRIC INDUSTRIES LIMITED 发明人 OSADA, MITUO C/O SUMITOMO ELECTRIC IND. LTD.;AMANO, YOSHINARI C/O SUMITOMO ELECTRIC IND. LTD.;OGASA, NOBUO C/O SUMITOMO ELECTRIC IND. LTD.;OHTSUKA, AKIRA C/O SUMITOMO ELECTRIC IND. LTD.
分类号 B22F3/24;H01L21/52;H01L21/58;H01L23/14;H01L23/373;(IPC1-7):01L23/14;01L23/36 主分类号 B22F3/24
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