<p>This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.</p>
申请公布号
EP0100232(A2)
申请公布日期
1984.02.08
申请号
EP19830304301
申请日期
1983.07.25
申请人
SUMITOMO ELECTRIC INDUSTRIES LIMITED
发明人
OSADA, MITUO C/O SUMITOMO ELECTRIC IND. LTD.;AMANO, YOSHINARI C/O SUMITOMO ELECTRIC IND. LTD.;OGASA, NOBUO C/O SUMITOMO ELECTRIC IND. LTD.;OHTSUKA, AKIRA C/O SUMITOMO ELECTRIC IND. LTD.