| 摘要 |
PURPOSE:To improve the reliability of a high molecular resin-sealed device by forming high moisture resistance wirings of an alloy of Ni, si of specific compositions by weight and the residue of aluminum on a semiconductor substrate. CONSTITUTION:A wiring layer which contains 0.01-2.5wt% of Ni, 0.5-4wt% of Si and the residue of aluminum is formed on a semiconductor substrate which has a PSG or high molecular resin layer on the surface. Preferably, Ni is 0.1-1wt%, Si is 1-2wt%. If the contents of the Ni and Si are out of these range, the moisture resistance decreases. When the wiring layer is covered with polyimide and/or PIQ resin, the heat resistance is improved. This composition can effectively perform the effects in case of resin sealing, and even when this is applied to a multilayer wiring structure, the moisture resistance and reliability can be extremely improved. |
