| 摘要 |
A switch includes an MIS-FET having a source and a control electrode defining a gate-source capacitance and being operated as a source follower for switching a given voltage, a first capacitor, a first auxiliary transistor and a second auxiliary transistor cutting off the first transistor when switched into a conducting state. The transistors each have a base, a collector and an emitter electrode defining a switching path. The collectors of each of the transistors are connected to the control electrode of the FET. A control input terminal is provided as well as second and third capacitors each being connected between the control input terminal and the base of a respective one of the transistors. The emitter electrode of the second transistor is connected to the source electrode of the FET. The first capacitor has one lead connected to the emitter electrode of the second transistor and to the source electrode of the FET for charging the gate-source capacitance of the FET through the switching path of the first transistor, and another lead connected to the emitter electrode of the first transistor and to a terminal of a voltage source having a lower voltage than the given voltage to be switched by the FET for charging the first capacitor when the first transistor is cut off.
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