Monolithic amplifier comprising a power division and recombination system grouping a plurality of transistors

摘要

A device combining a certain number of elementary amplifiers formed on the same semiconductor wafer having a very high frequency (about 10 GHz), thus obtaining a monolithic amplifier with a high power and a wide pass band. This amplifier comprises at the input a first transmission line of the microstrip type, bent in such a way that it has an input branch and a tap branch where the waves reflected as a result of mismatches are absorbed in a resistive load. The bent region of line is connected to a row of elements of the impedance transformation lines passing to the gates (case of field effect transistors). It comprises at the output a second microstrip line parallel to the first and bias connected to a row of elements identical to those of the amplifier input.